Organic electroluminescent display panel device and method of fabricating the same

ABSTRACT

An organic electroluminescent device includes first and second substrates having pixel regions and a peripheral region, a first common electrode at the peripheral region on the first substrate, a driving thin film transistor (TFT) at each of the pixel regions on the first substrate, a first connection electrode connected to a drain electrode of the TFT, a second connection electrode connected to the first common electrode, a first electrode on the second substrate, isolating patterns on the first electrode corresponding to each border between the pixel regions, a first insulating pattern on the first electrode corresponding to the second connection electrode, partition walls on the isolating patterns, an organic luminescent layer on the first electrode, a second electrode on the organic luminescent layer connected to the first connection electrode at each of the pixel regions, and a first contacting electrode on the first insulating pattern contacting the first electrode.

The present invention claims the benefit of the Korean PatentApplication No. P2002-074012 filed in Korea on Nov. 26, 2002, which ishereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an organic electroluminescent displaypanel device and method of fabricating the same, and more particularly,to an organic electroluminescent display panel device and a method offabricating the same that has a high aperture ratio and high definitionimages.

2. Discussion of the Related Art

In general, an organic electroluminescent device emits light byinjecting electrons from a cathode electrode and holes from an anodeelectrode into an emissive layer, combining the electrons and the holesto generate an exciton, and transiting the exciton from an excited stateto a ground state. Since the organic electroluminescent device isself-luminescent and does not require an additional light source, theorganic electroluminescent device has a small size and is light weight,as compared to a liquid crystal display device. The organicelectroluminescent device also has low power consumption, highbrightness, and short response time. Thus, the organicelectroluminescent device is used in many consumer electronics, such ascellular phones, car navigation systems (CNSs), personal digitalassistants (PDAs), camcorders, and palm PCs. In addition, the organicelectroluminescent device can have reduced manufacturing costs becauseof its simple manufacturing processes.

Organic electroluminescent devices may be categorized into passivematrix-type and active matrix-type depending upon how the device isdriven. Compared to an active matrix-type, passive matrix-type organicelectroluminescent devices have a simpler structure and are fabricatedthrough a simpler manufacturing process. However, the passivematrix-type organic electroluminescent devices have higher powerconsumption, thereby preventing use in large area displays. Furthermore,in passive matrix organic electroluminescent devices, aperture ratiodecreases according to the increasing number of electrical lines. Thus,the passive matrix-type organic electroluminescent devices are commonlyused as small-sized display devices. In contrast, active matrix-typeorganic electroluminescent devices are commonly used as large-sizeddisplay devices since they have high luminous efficacy, and provide highdefinition images.

FIG. 1 is a cross sectional view of an organic electroluminescentdisplay panel device according to the related art. In FIG. 1, theorganic electroluminescent device 10 includes a first substrate 12 and asecond substrate 28, that face each other with a predetermined spacetherebetween. A plurality of thin film transistors T and a plurality offirst electrodes 16 are formed on an inner surface of the firstsubstrate 12, wherein each of the first electrodes 16 are connected toeach of the thin film transistors T, respectively. In addition, organicluminescent layers 18 are formed on the first electrodes 16 and the thinfilm transistors T, and a second electrode 20 is formed on the organicluminescent layers 18. The organic luminescent layers 18 emit light inone of three colors: red (R), green (G), and blue (B) within a pixelregion P, and are generally formed by patterning an organic material.

A desiccant 22 is formed on an inner surface of the second substrate 28to remove any external moisture and air that may permeate into a spacebetween the first and second substrates 12 and 28. The inner surface ofthe second substrate 28 is patterned to form a groove, and the desiccant22 is disposed within the groove and is fastened with a tape 25.

A sealant 26 is formed between the first and second substrates 12 and28, and surrounds array elements, such as the thin film transistors T,the first electrodes 16, the organic luminescent layers 18, and thesecond electrodes 20. The sealant 26 attaches the first and secondsubstrates 12 and 28 together and forms an airtight space to protect theelements from the external moisture and air.

FIG. 2 is a plane view of a pixel of the organic electroluminescentdisplay panel device of FIG. 1. In FIG. 2, the pixel includes aswitching thin film transistor (TFT) T_(S), a driving thin filmtransistor (TFT) T_(D), and a storage capacitor C_(ST). In addition, agate line 32 and a data line 34 are formed on the first substrate 12,and are formed of a transparent material, such as glass and plastic. Thegate line 32 and the data line 34 cross each other, thereby defining thepixel region P, and a power line 35 is formed parallel to the data line34.

The switching TFT T_(S) includes a gate electrode 36, an active layer40, a source electrode 46, and a drain electrode 50. The driving TFTT_(D) includes a gate electrode 38, an active layer 42, a sourceelectrode 48, and a drain electrode 52. In particular, the gateelectrode 36 of the switching TFT T_(S) connects to the gate line 32,and the source electrode 46 of the switching TFT T_(S) connects to thedata line 34. The drain electrode 50 of the switching TFT T_(S) connectsto the gate electrode 38 of the driving TFT T_(D) through a firstcontact hole 54, and the source electrode 48 of the driving TFT T_(D)connects to the power line 35 through a second contact hole 56. Thedrain electrode 52 of the driving TFT T_(D) connects to the firstelectrode 16 in the pixel region P. A capacitor electrode 15 overlapsthe power line 35 to form the storage capacitor CST, and is made ofdoped polycrystalline silicon and connects to the drain electrode 50 ofthe switching TFT T_(S).

FIG. 3 is a layout of the organic electroluminescent display paneldevice of FIG. 1. In FIG. 3, a display area is defined in a centralregion of the first substrate 12. A data pad portion E is formed in anupper side of the first substrate 12, and a first gate pad portion F1and a second gate pad portion F2 are formed in left and right sides ofthe first substrate 12, respectively. A common electrode 39 is formed ina lower side of the substrate 12. The common electrode 39 applies acommon voltage to the second electrode 20, which functions as a cathodeelectrode and is formed over the display area, and maintains the commonvoltage.

FIG. 4A is a cross sectional view along IVA-IVA of FIG. 2. In FIG. 4A,the driving TFT T_(D) is formed on the substrate 12, and includes thegate electrode 38, the active layer 42, and the source and drainelectrodes 48 and 52. The storage capacitor CST is formed over thesubstrate 12 and is parallel connected to the driving TFT T_(D). Thestorage capacitor CST includes the capacitor electrode 15 and the powerline 35, which function as a first capacitor electrode and a secondcapacitor electrode, respectively. The capacitor electrode 15 is made ofpolycrystalline silicon. An insulating layer 57 covers the driving TFTT_(D) and the storage capacitor CST, and the first electrode 16 isformed on the insulating layer 57 to electrically contact the drainelectrode 52. An organic luminescent layer 18 that emits one color oflight is formed on the first electrode 16, and the second electrode 20is formed on the organic layer 18.

FIG. 4B is a cross sectional view along IVB-IVB of FIG. 3. In FIG. 4B,the common electrode 39 is formed in a side of the substrate 12 to applya common voltage to the second electrode 20 (FIG. 4A). The commonelectrode 39 may be made of the same material as the gate electrode 38of the driving TFT T_(D) (FIG. 4A). The common electrode 39 is exposedby a first common contact hole 60 and a second common contact hole 62through insulating layers. The second electrode 20 connects to thecommon electrode 39. An input line (not shown) from the outside couldconnect to the common electrode 39 through the second common contacthole 62.

A yield of the organic electroluminescent device depends on yields ofthe thin film transistor and the organic layer. Especially, the yield ofthe organic electroluminescent device varies due to impurities in theprocess of forming the organic layer to a thickness of about 1,000 Å.Accordingly, the yield of the organic electroluminescent device of therelated art is reduced because of the impurities, thereby resulting in aloss of manufacturing costs and source materials for the thin filmtransistor.

Moreover, the organic electroluminescent device of the related art is abottom emission mode device having stability and degrees of freedom forthe manufacturing processes. However, the bottom emission mode devicehas a reduced aperture ratio. Thus, the bottom emission mode organicelectroluminescent device has difficulty in being used as a highaperture device.

On the other hand, a top emission mode organic electroluminescent devicehas a high aperture ratio, and is easy to manufacture. However, in thetop emission mode organic electroluminescent device, since a cathodeelectrode is generally disposed over the organic layer, a choice ofmaterial with which to make the cathode electrode is limited.Accordingly, transmittance of light is limited, and a luminous efficacyis reduced. Furthermore, in order to improve light transmittance thepassivation layer should be formed as a thin film, whereby the exteriormoisture and air is not fully blocked.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to an organicelectroluminescent display panel device and a method of fabricating thesame that substantially obviate one or more of the problems due tolimitations and disadvantages of the related art.

An object of the present invention is to provide an organicelectroluminescent display panel device and a method of fabricating thesame having a high aperture ratio and high definition images.

Another object of the present invention is to provide an organicelectroluminescent display panel device and a method of fabricating thesame having an improved yield and productivity.

Another object of the present invention is to provide an organicelectroluminescent display panel device and a method of fabricating thesame that are reliable.

Additional features and advantages of the invention will be set forth inthe description which follows and in part will be apparent from thedescription, or may be learned by practice of the invention. Theobjectives and other advantages of the invention will be realized andattained by the structure particularly pointed out in the writtendescription and claims hereof as well as the appended drawings.

To achieve these and other advantages and in accordance with the purposeof the present invention, as embodied and broadly described, the organicelectroluminescent device includes first and second substrates facingand spaced apart from each other, the first and second substrates havinga display area including a plurality of pixel regions and a firstperipheral region at one side of the display area, a first commonelectrode at the first peripheral region on an inner surface of thefirst substrate, a driving thin film transistor at each of the pixelregions on the inner surface of the first substrate, the driving thinfilm transistor including an active layer, a gate electrode, and sourceand drain electrodes, a first connection electrode connected to thedrain electrode of the driving thin film transistor at each of the pixelregions, a second connection electrode connected to the first commonelectrode at the first peripheral region, a first electrode on an entireinner surface of the second substrate, isolating patterns on the firstelectrode corresponding to each border between the pixel regions, afirst insulating pattern at the first peripheral region on the firstelectrode corresponding to the second connection electrode, partitionwalls on the isolating patterns, an organic luminescent layer at each ofthe pixel regions on the first electrode, a second electrode on theorganic luminescent layer connected to the first connection electrode ateach of the pixel regions, a first contacting electrode on the firstinsulating pattern contacting the first electrode, and a sealantattaching the first and second substrates.

In another aspect, the method of fabricating an organicelectroluminescent device includes forming an insulating layer on afirst substrate having a display area including a plurality of pixelregions and a first peripheral region at one side of the display area,forming a driving thin film transistor at each of the plurality of pixelregions on the insulating layer, the driving thin film transistorincluding an active layer, a gate electrode, and source and drainelectrodes, forming a first common electrode at the first peripheralregion on the insulating layer, forming a first connection electrode anda second connection electrode, the first connection electrode connectedto the drain electrode, the second connection electrode connected to thefirst common electrode, forming a first electrode on a second substrate,forming isolating patterns and a first insulating pattern on the firstelectrode, the isolating patterns corresponding to each border betweenthe pixel regions, the first insulating pattern at the first peripheralregion, forming partition walls on the isolating patterns, forming anorganic luminescent layer at each of the plurality of pixel regions onthe first electrode, forming a second electrode on the organicluminescent layer, forming a first contacting electrode on the firstinsulating pattern and contacting the first electrode, and attaching thefirst and second substrates with a sealant such that the firstconnection electrode contacts the second electrode and the secondconnection electrode contacts the first contacting electrode.

In another aspect, the method of fabricating an organicelectroluminescent device includes forming a first insulating layer on afirst substrate having a display area including a plurality of pixelregions and a first peripheral region at one side of the display area,forming an active layer on the first insulating layer at each of theplurality of pixel regions, the active layer including polycrystallinesilicon, the active layer having source and drain regions, forming asecond insulating layer on the active layer, forming a gate electrode onthe second insulating layer over the active layer, forming a thirdinsulating layer on the gate electrode, the third insulating layerhaving first and second contact holes, the first contact hole exposingthe source region, the second contact hole exposing the drain region,forming source and drain electrodes and a first common electrode on thethird insulating layer, the source electrode being connected to thesource region through the first contact hole, the drain electrodeconnected to the drain region through the second electrode, the firstcommon electrode disposed at the peripheral region, forming a fourthinsulating layer on the source and drain electrodes and the first commonelectrode, the fourth insulating layer having third, fourth and fifthcontact holes, the third contact hole exposing the drain electrode, thefourth and fifth contact holes exposing the first common electrode,forming first and second connection electrodes on the fourth insulatinglayer, the first connection pattern connected to the drain electrodethrough third contact hole, the second connection electrode connected tothe first common electrode through the fourth contact hole, forming afirst electrode on a second substrate, forming isolating patterns and afirst insulating pattern on the first electrode, the isolating patternscorresponding to each border between the pixel regions, the firstinsulating pattern at the first peripheral region, forming partitionwalls on the isolating patterns, forming an organic luminescent layer ateach of the plurality of pixel regions on the first electrode, forming asecond electrode on the organic luminescent layer, forming a firstcontacting electrode on the first insulating pattern and contacting thefirst electrode, and attaching the first and second substrates with asealant such that the first connection electrode contacts the secondelectrode and the second connection electrode contacts the firstcontacting electrode.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this application, illustrate embodiments of the invention andtogether with the description serve to explain the principle of theinvention. In the drawings:

FIG. 1 is a cross sectional view of an organic electroluminescentdisplay panel device according to the related art;

FIG. 2 is a plane view of a pixel of the organic electroluminescentdisplay panel device of FIG. 1;

FIG. 3 is a layout of the organic electroluminescent display paneldevice of FIG. 1;

FIG. 4A is a cross sectional view along IVA-IVA of FIG. 2;

FIG. 4B is a cross sectional view along IVB-IVB of FIG. 3;

FIG. 5 is a cross sectional view of an exemplary organicelectroluminescent display panel device according to the presentinvention;

FIG. 6A is a cross sectional view of region H of FIG. 5;

FIG. 6B is a cross sectional view of region I of FIG. 5;

FIGS. 7A to 7C are cross-sectional views showing an exemplaryfabricating process for a pixel region of a first substrate for anorganic electroluminescent device according to the present invention;

FIGS. 8A to 8C are cross-sectional views showing an exemplaryfabricating process for a peripheral region of the first substrate foran organic electroluminescent device according to the present invention;

FIGS. 9A to 9D are cross-sectional views showing an exemplaryfabricating process for a display area of a second substrate for anorganic electroluminescent device according to the present invention;

FIGS. 10A to 10D are cross-sectional views showing an exemplaryfabricating process for a peripheral region of the second substrate foran organic electroluminescent device according to the present invention;and

FIG. 11 is a cross-sectional view showing another exemplary organicelectroluminescent device according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference will now be made in detail to the preferred embodiments of thepresent invention, an example of which is illustrated in theaccompanying drawings.

FIG. 5 is a cross sectional view of an exemplary organicelectroluminescent display panel device according to the presentinvention. In FIG. 5, the organic electroluminescent device may includea first substrate 100 and a second substrate 200 that are spaced apartand face each other. A sealant 300 may be used to attach the first andsecond substrates 100 and 200 together. The first and second substrates100 and 200 may include a plurality of pixel regions P, which constitutea display area, and a peripheral region A, which is disposed at a sideof the display area. In addition, a plurality of thin film transistors Tmay be formed on an inner surface of the first substrate 100 adjacent tothe plurality of pixel regions P, respectively, wherein the thin filmtransistor T may function as a driving thin film transistor of theorganic electroluminescent device. Although not shown, a plurality ofswitching thin film transistors and array lines also may be formed onthe inner surface of the first substrate 100.

A plurality of first auxiliary electrodes 202 may be formed on an innersurface of the second substrate 200 and a first electrode 204 may beformed on the entire inner surface of the second substrate 200 coveringthe first auxiliary electrodes 202. The first electrode 204 may functionas an anode for injecting holes, and may receive a common voltage. Inaddition, a plurality of isolating patterns 206 may be formed on thefirst electrode 204 by depositing and patterning an insulating material.Further, a plurality of partition walls 210 may be formed on theplurality of isolating patterns 206, such that the isolating patterns206 and the partition walls 210 correspond to borders between the pixelregions P. Between the adjacent partition walls 210, a plurality oforganic luminescent layers 212 and a plurality of second electrodes 214may be subsequently formed on the first electrode 204. The plurality ofsecond electrodes 214 may function as a cathode for injecting electrons.Each of the second electrodes 214 may be electrically connected to eachof the thin film transistors T through a first connection electrode 130.The first connection electrodes 130 may be first formed on the innersurface of the first substrate 100, and the first substrate 100 may thenbe attached to the second substrate 200 by the sealant 300, such thatthe first connection electrodes 130 contact the second electrodes 214,respectively.

In addition, a common electrode 126 may be formed over the inner surfaceof the first substrate 100 in the peripheral region A. A secondauxiliary electrode 203 may be formed on the inner surface of the secondsubstrate 200 in the peripheral region A before forming the firstelectrode 204, such that the first electrode 204 covers the secondauxiliary electrode 203. The second auxiliary electrode 203 may be madeof a same material as the first auxiliary electrodes 202. Further, aninsulating pattern 208 may be formed on the first electrode 204 over thesecond auxiliary electrode 203, and a contacting electrode 216 may beformed on the insulating pattern 208 to be directly connected to thefirst electrode 204. The insulating pattern 208 may be made of a samematerial as the isolating pattern 206, and may be simultaneously formedduring the process of forming the isolating pattern 206. Also, thecontacting electrode 216 may be made of a same material as the secondelectrode 214, and may be simultaneously formed during the process offorming the second electrodes 214. The contacting electrode 216 mayelectrically connect to the common electrode 126 through a secondconnection electrode 132.

Accordingly, the first and second connection electrodes 130 and 132maintain uniform gaps both in the pixel regions P and the peripheralregion A, thereby preventing the common voltage being poorly applied tothe first electrode 204 through the second connecting electrode 132.

FIG. 6A is a cross sectional view of region H of FIG. 5, and FIG. 6B isa cross sectional view of region I of FIG. 5. In FIG. 6A, the firstauxiliary electrode 202, the first electrode 204, the isolating pattern206, the partition wall 210, the organic luminescent layer 212 and thesecond electrode 214 are formed on the inner surface of the secondsubstrate 200. A first portion J, where the first connecting electrode130 of FIG. 5 would contact the second substrate 200, may include onlythe first electrode 204, the isolating pattern 206, the organicluminescent layer 212 and the second electrode 214. In FIG. 6B, a secondportion K, where the second connecting electrode 132 of FIG. 5 wouldcontact the second substrate 200, may include only the second auxiliaryelectrode 203, the first electrode 204, the insulating pattern 208, andthe contact electrode 216. The first and second auxiliary electrodes 202and 203 may have a thickness within a range of about 500 Å to 3,000 Å.The first electrode 204 may have a thickness within a range of about1,000 Å to 2,000 Å. The isolating pattern 206 and the insulating pattern208 may have a thickness within a range of about 500 Å to 3,000 Å. Theorganic luminescent layer 212 may have a thickness within a range ofabout 1,000 Å to 2,000 Å, and the second electrode 214 and the contactelectrode 216 may have a thickness within a range of about 500 Å to3,000 Å. Accordingly, the layers of the first portion J may have a firstthickness within a range of about 3,000 Å to 10,000 Å and the layers ofthe second portion K may have a second thickness within a range of aboutÅ 2,500 to 11,000 Å. Thus, the first thickness and the second thicknessmay be similar to each other.

FIGS. 7A to 7C are cross-sectional views showing an exemplaryfabricating process for a pixel region of a first substrate for anorganic electroluminescent device according to the present invention.FIGS. 8A to 8C are cross-sectional views showing an exemplaryfabricating process for a peripheral region of the first substrate foran organic electroluminescent device according to the present invention.In particular, FIGS. 7A to 7C may correspond to cross-sections alongIVA-IVA of FIG. 2, and FIGS. 8A to 8C correspond to cross-sections alongIVB-IVB of FIG. 3. In FIGS. 7A and 8A, a first substrate 100 may includea pixel region P, a driving region D, a storage region C and aperipheral region A. A buffer layer 102 may be formed on an entiresurface of the first substrate 100 as a first insulating layer bydepositing one of silicon nitride (SiN_(x)) and silicon oxide (SiO₂). Apolycrystalline pattern 104 and a second polycrystalline pattern 105 ofpolycrystalline silicon may be formed on the buffer layer 102 within thedriving and storage regions D and C, respectively. For example, thefirst and second polycrystalline patterns 104 and 105 can be formedthrough a dehydrogenation process and a crystallization process using aheat after deposition of amorphous silicon. The second-polycrystallinepattern 105 may function as a first electrode of a storage capacitor bydoping with impurities. A gate insulating layer 106 as a secondinsulating layer and a gate electrode 108 may be sequentially formed ona central portion of the first polycrystalline pattern 104. The gateinsulating layer 106 may be formed on the entire surface of the firstsubstrate 100, and may be made of one of silicon nitride (SiN_(x)) andsilicon oxide (SiO₂).

After forming the gate electrode 108, the first polycrystalline pattern104 may be doped with impurities such as boron (B) or phosphorus (P) todefine a channel region 104 a corresponding to the gate electrode 108,and source and drain regions 104 b and 104 c at both sides of thechannel region 104 a. The second polycrystalline pattern 105 also may bedoped with the impurities. The gate electrode 108 may be formed of oneof aluminum (Al), aluminum (Al) alloy, copper (Cu), tungsten (W),tantalum (Ta) and molybdenum (Mo). An interlayer insulating layer 110 asa third insulating layer may be formed on the entire surface of thefirst substrate 100 covering the gate electrode 108. The interlayerinsulating layer 110 may be formed of one silicon nitride (SiN_(x)) andsilicon oxide (SiO₂). A capacitor electrode 112 may be formed on theinterlayer insulating layer 110 within the storage region C bydepositing and patterning one of aluminum (Al), aluminum (Al) alloy,copper (Cu), tungsten (W), tantalum (Ta) and molybdenum (Mo). Thecapacitor electrode 112 may be a part of a power line (not shown). Thesecond polycrystalline pattern 105 and the capacitor electrode 112overlapping the second active layer 105 constitute a storage capacitorwith the interlayer insulating layer 110 interposed therebetween.

In FIGS. 7B and 8B, a fourth insulating layer 114 may be formed on theentire surface of the first substrate 100 covering the capacitorelectrode 112. First, second and third contact holes 116, 118 and 120may be formed in the fourth insulating layer 114 exposing the drainregion 104 c, the source region 104 b, and the capacitor electrode 112,respectively.

In FIGS. 7C and 8C, source and drain electrodes 124 and 122 may beformed on the fourth insulating layer 114 by depositing and patterningone of chromium (Cr), molybdenum (Mo), tantalum (Ta) and tungsten (W).The source electrode 124 may contact the source region 104 b through thesecond contact hole 118, and the drain electrode 122 may contact thedrain region 104 c through the first contact hole 116. A commonelectrode 126 also may be formed on the fourth insulating layer 114within the peripheral region A. A fifth insulating layer 128 may beformed on the entire surface of the first substrate 100 covering thesource and drain electrodes 124 and 122 and the common electrode 126.Fourth, fifth and sixth contact holes 134, 136 and 138 may be formed inthe fifth insulating layer 128 exposing the drain electrode 122, and theboth sides of the common electrode 126, respectively. Then, first andsecond connection electrodes 130 and 132 may be formed on the fifthinsulating layer 128 by depositing and patterning a conductive metallicmaterial. The first connection electrode 130 may contact the drainelectrode 122 through the fourth contact hole 134 within the pixelregion P. The second connection electrode 132 may contact the commonelectrode 126 through the fifth contact hole 136.

FIGS. 9A to 9D are cross-sectional views showing an exemplaryfabricating process for a display area of a second substrate for anorganic electroluminescent device according to the present invention.FIGS. 10A to 10D are cross-sectional views showing an exemplaryfabricating process for a peripheral region of the second substrate foran organic electroluminescent device according to the present invention.In FIGS. 9A and 10A, a second substrate 200 may include a plurality ofpixel regions P in the display area, and a peripheral region A at oneside of the display area. A plurality of first auxiliary electrodes 202may be formed on the second substrate 200 by depositing and patterning ametallic material having relatively low resistance. The plurality offirst auxiliary electrodes 202 may have a lower resistance than a firstelectrode to be formed thereon later. For example, if the firstelectrode is made of indium-tin-oxide, the plurality of first auxiliaryelectrodes 202 may be made of one of chromium, molybdenum, aluminum, andaluminum alloy. A second auxiliary electrode 203 may be formed on thesecond substrate within the peripheral region A. The first auxiliaryelectrodes 202 may have a lattice form. Since the first auxiliaryelectrodes 202 may be made of an opaque metallic material, the firstauxiliary electrodes 202 are disposed at regions where light is notemitted, i.e., at outsides of the pixel region P for displaying images.The first auxiliary electrodes 202 and the second auxiliary electrode203 may be electrically connected at a certain place.

A first electrode 204 may be formed on an entire surface of the secondsubstrate 200 covering the first auxiliary electrodes 202 and the secondauxiliary electrode 203. The first electrode 204 may function as ananode for injecting holes into an organic luminescent layer to be formedthereon later. For example, the first electrode 204 may includeindium-tin-oxide (ITO) or indium-zinc-oxide (IZO) that is transparentand has high work function. The first electrode 204 may receive a commonvoltage through the second connection electrode 132 of FIG. 8C at theperipheral region A.

In FIGS. 9B and 10B, a plurality of isolating patterns 206 may be formedon the first electrode 204 over the first auxiliary electrodes 202 byusing an insulating material. The isolating patterns 206 may have alattice form in a plan view. An insulating pattern 208 of an islandshape, which is made of the same material as the isolating patterns 206,may also be formed on the first electrode 204 over the second auxiliaryelectrode 203 within the peripheral region A. A plurality of partitionwalls 210, which also have a lattice form, may be formed on theisolating patterns 206. The plurality of partition walls 210 may be madeof an insulating material including an photosensitive organic material.The plurality of partition walls 210 make a plurality of organicluminescent layers and a plurality of second electrodes to be separatelyformed by pixel regions P in the following processes.

In FIGS. 9C and 10C, a plurality of organic luminescent layers 212 maybe formed on the first electrode 204 in the pixel regions P. The organicluminescent layer 212 emitting one of red, green and blue colorscorresponds to each of the pixel regions P. The organic luminescentlayer 212 has a single layer or multiple layers. When the organicluminescent layer 212 has multiple layers, the organic luminescent layer212 may include a hole transporting layer (HTL) 212 a contacting thefirst electrode 204, an organic emitting layer 212 b on the HTL 212 a,and an electron transporting layer (ETL) 212 c on the organic emittinglayer 212 b.

In FIGS. 9D and 10D, a plurality of second electrodes 214 may be formedon the organic luminescent layers 212. Each of the second electrodes 214may correspond to each of the pixel regions P and may be separated fromeach other by the partition walls 210. In addition, the isolatingpatterns 206 under the partition walls 210 may prevent the secondelectrodes 214 from electrically contacting the first electrode 204. Theplurality of second electrodes 214 may function as a cathode forinjecting electrons into the organic luminescent layer 212. A contactingelectrode 216 may be simultaneously formed on the insulating pattern 208within the peripheral region A in a process of forming the secondelectrode 214. The contacting electrode 216 may contact the firstelectrode 204. The contacting electrode 216 may connect to the secondconnection electrode 132 of FIG. 8C, and may apply the common voltage tothe first electrode 204 through the common electrode 126 and the secondconnection electrode 132 of FIG. 8C. The second electrodes 214 and thecontacting electrode 216 may include a single layer of aluminum (Al),calcium (Ca) or magnesium (Mg), or multiple layers of lithium fluoride(LiF) or aluminum (Al). The plurality of second electrodes 214 may havea lower work function than the first electrode 204.

The first and second substrates 100 and 200 formed by fabricatingprocesses of FIGS. 6A to 10D may be attached to each other with asealant, thereby an organic electroluminescent device obtained.

FIG. 11 is a cross-sectional view showing another exemplary organicelectroluminescent device according to the present invention. In FIG.11, first and second substrates 300 and 400 may be attached to eachother with a predetermined space therebetween by a sealant 500. Thefirst and second substrates 300 and 400 may have a plurality of pixelregions P, which constitute a display area, and peripheral regions A,which are disposed at both sides of the display area. A plurality ofthin film transistors T and a plurality of array lines (not shown) maybe formed on an inner surface of the first substrate 300. In particular,each of the thin film transistors T may be disposed adjacent of each ofthe pixel regions P.

A plurality of first auxiliary electrodes 402 may be formed on an innersurface of the second substrate 400 and a first electrode 404 may beformed on the entire inner surface of the second substrate 400 coveringthe first auxiliary electrodes 402. The first electrode 404 may functionas an anode for injecting holes. In addition, a plurality of isolatingpatterns 406 made of an insulating material may be formed on the firstelectrode-404, and a plurality of partition walls 410 may be formed onthe plurality of isolating patterns 406 corresponding to borders betweenthe thin film transistors T and the pixel regions P. Between theadjacent partition walls 410, a plurality of organic luminescent layers412 and a plurality of second electrodes 414 may be formed on the firstelectrode 404. The plurality of second electrodes 414 may function as acathode for injecting electrons. Each of the plurality of secondelectrodes 414 may electrically connect to each of the thin filmtransistors T through a first connection electrode 330. That is, aplurality of first connection electrodes 330 may be first formed on theinner surface of the first substrate 300, and the first substrate 300may be attached to the second substrate 400, such that the firstconnection electrodes 330 contact the second electrodes 414,respectively.

Common electrodes 326 a and 326 b may be formed over the inner surfaceof the first substrate 300 within the peripheral regions A. In addition,second auxiliary electrodes 403 a and 403 b may be formed on the innersurface of the second substrate 400 within the peripheral region A, suchthat the first electrode 404 covers the second auxiliary electrodes 403a and 403 b. The second auxiliary electrodes 403 a and 403 b may be madeof the same material as the first auxiliary electrodes 402. In addition,insulating patterns 408 a and 408 b may be formed on the first electrode404 over the second auxiliary electrodes 403 a and 403 b, and contactingelectrodes 416 a and 416 b may be formed on the insulating patterns 408a and 408 b to be directly connected to the first electrode 404. Thecontacting electrodes 416 a and 416 b may be simultaneously-formedduring the process of forming the plurality of second electrodes 414.The contacting electrodes 416 a and 416 b may electrically connect tothe common electrodes 326 a and 326 b through second connectionelectrodes 332 a and 332 b, respectively.

Accordingly, the first and second connection electrodes 330, 332 a and332 b maintain uniform gaps both in the pixel regions P and theperipheral regions A. Also, since the organic electroluminescent deviceis a top emission type, a high aperture ratio can be obtained.Furthermore, since an array pattern including a thin film transistor andan organic luminescent layer are independently formed on an individualsubstrate, bad effects due to a fabricating process of the organicluminescent layer can be prevented, thereby improving a productionyield. Moreover, since a second connection pattern is formed at aperipheral region to contact a first pad and a first electrode,inferiority due to a signal distortion can be prevented, thereby furtherimproving the production yield.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the organicelectroluminescent display panel device and the method of fabricatingthe same of the present invention without departing from the spirit orscope of the invention. Thus, it is intended that the present inventioncovers the modifications and variations of this invention provided theycome within the scope of the appended claims and their equivalents.

1-14. (canceled)
 15. A method of fabricating an organicelectroluminescent device, comprising: forming an insulating layer on afirst substrate having a display area including a plurality of pixelregions and a first peripheral region at one side of the display area;forming a driving thin film transistor at each of the plurality of pixelregions on the insulating layer, the driving thin film transistorincluding an active layer, a gate electrode, and source and drainelectrodes; forming a first common electrode at the first peripheralregion on the insulating layer; forming a first connection electrode anda second connection electrode, the first connection electrode connectedto the drain electrode, the second connection electrode connected to thefirst common electrode; forming a first electrode on a second substrate;forming isolating patterns and a first insulating pattern on the firstelectrode, the isolating patterns corresponding to each border betweenthe pixel regions, the first insulating pattern at the first peripheralregion; forming partition walls on the isolating patterns; forming anorganic luminescent layer at each of the plurality of pixel regions onthe first electrode; forming a second electrode on the organicluminescent layer; forming a first contacting electrode on the firstinsulating pattern and contacting the first electrode; and attaching thefirst and second substrates with a sealant such that the firstconnection electrode contacts the second electrode and the secondconnection electrode contacts the first contacting electrode.
 16. Themethod according to claim 15, further comprising a step of forming afirst auxiliary electrode and a second auxiliary electrode between thesecond substrate and the first electrode, wherein the first auxiliaryelectrode corresponds to the isolating patterns and the second auxiliaryelectrode corresponds to the first insulating pattern.
 17. The methodaccording to claim 16, wherein the first and second auxiliary electrodeshave a lower resistance than the first electrode.
 18. The methodaccording to claim 17, wherein the first and second auxiliary electrodesinclude one of chromium (Cr), molybdenum (Mo) and tungsten (W).
 19. Themethod according to claim 15, wherein the step of forming a firstcontacting electrode is simultaneously performed with the step offorming a second electrode.
 20. The method according to claim 15,wherein the first electrode is an anode for injecting holes into theorganic luminescent layer, and wherein the second electrode is a cathodefor injecting electrons into the organic luminescent layer.
 21. Themethod according to claim 20, wherein the first electrode includes oneof indium-tin-oxide (ITO) and indium-zinc-oxide (IZO).
 22. The methodaccording to claim 20, wherein the second electrode includes one ofcalcium (Ca), aluminum (Al) and magnesium (Mg).
 23. The method accordingto claim 15, further comprising steps of forming a polycrystallinesilicon pattern connected to the gate electrode and forming a capacitorelectrode over the polycrystalline silicon pattern constituting astorage capacitor, the capacitor electrode being connected to the drainelectrode.
 24. The method according to claim 15, wherein the firstcommon electrode is disposed at an interior of the sealant.
 25. Themethod according to claim 15, further comprising steps of: forming asecond common electrode on the inner surface of the first substrate;forming a third connection electrode connected to the second commonelectrode; forming a second insulating pattern on the first electrode;and forming a second contacting electrode on the second insulatingpattern, wherein the second common electrode, the third connectionelectrode, the second insulating pattern and the second contactingelectrode are disposed at a second peripheral region at the other sideof the display area, and the second contacting electrode contacts thefirst electrode and is connected to the third connection electrode. 26.The method according to claim 25, further comprising a step of forming afirst auxiliary electrode, a second auxiliary electrode and a thirdauxiliary electrode between the second substrate and the firstelectrode, wherein the first auxiliary electrode corresponds to theisolating patterns, the second auxiliary electrode corresponds to thefirst insulating pattern, and the third auxiliary electrode correspondsto the second insulating pattern.
 27. A method of fabricating an organicelectroluminescent device, comprising: forming a first insulating layeron a first substrate having a display area including a plurality ofpixel regions and a first peripheral region at one side of the displayarea; forming an active layer on the first insulating layer at each ofthe plurality of pixel regions, the active layer includingpolycrystalline silicon, the active layer having source and drainregions; forming a second insulating layer on the active layer; forminga gate electrode on the second insulating layer over the active layer;forming a third insulating layer on the gate electrode, the thirdinsulating layer having first and second contact holes, the firstcontact hole exposing the source region, the second contact holeexposing the drain region; forming source and drain electrodes and afirst common electrode on the third insulating layer, the sourceelectrode being connected to the source region through the first contacthole, the drain electrode connected to the drain region through thesecond electrode, the first common electrode disposed at the peripheralregion; forming a fourth insulating layer on the source and drainelectrodes and the first common electrode, the fourth insulating layerhaving third, fourth and fifth contact holes, the third contact holeexposing the drain electrode, the fourth and fifth contact holesexposing the first common electrode; forming first and second connectionelectrodes on the fourth insulating layer, the first connection patternconnected to the drain electrode through third contact hole, the secondconnection electrode connected to the first common electrode through thefourth contact hole; forming a first electrode on a second substrate;forming isolating patterns and a first insulating pattern on the firstelectrode, the isolating patterns corresponding to each border betweenthe pixel regions, the first insulating pattern at the first peripheralregion; forming partition walls on the isolating patterns; forming anorganic luminescent layer at each of the plurality of pixel regions onthe first electrode; forming a second electrode on the organicluminescent layer; forming a first contacting electrode on the firstinsulating pattern and contacting the first electrode; and attaching thefirst and second substrates with a sealant such that the firstconnection electrode contacts the second electrode and the secondconnection electrode contacts the first contacting electrode.
 28. Themethod according to claim 27, further comprising steps of: forming asecond common electrode on the inner surface of the first substrate;forming a third connection electrode connected to the second commonelectrode; forming a second insulating pattern on the first electrode;and forming a second contacting electrode on the second insulatingpattern, wherein the second common electrode, the third connectionelectrode, the second insulating pattern and the second contactingelectrode are disposed at a second peripheral region at the other sideof the display area, and the second contacting electrode contacts thefirst electrode and is connected to the third connection electrode. 29.The method according to claim 28, further comprising a step of forming afirst auxiliary electrode, a second auxiliary electrode and a thirdauxiliary electrode between the second substrate and the firstelectrode, wherein the first auxiliary electrode corresponds to theisolating patterns, the second auxiliary electrode corresponds to thefirst insulating pattern, and the third auxiliary electrode correspondsto the second insulating pattern.